Prof. Paul R. Berger |
|
Ohio State University College of Engineering Electrical Engineering ProfessorAppointed: 2003 Ohio State University College of Mathematical and Physical Sciences Physics ProfessorAppointed: 2001 |  |
Mailing AddressDepartment of Electrical and Computer Engineering Ohio State University 205 Dreese Laboratory 2015 Neil Avenue Columbus, Ohio 43210United States | Contact Information |
Qualifications
Ph.D., University of Michigan, Electrical Engineering, 1990.
M.S., University of Michigan, Electrical Engineering, 1987.
B.S., University of Michigan, Engineering Physics, 1985.
Expertise and Research Interests
Prof. Berger has expertise in the following topics:
* Si-based Resonant Interband Tunnel Diodes for Quantum Functional Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
* Nanoelectronics: Si-based Quantum Dot Nanoswitches to Replace CMOS
* Conjugated Polymer-based Flexible Electronics, Foldable Optoelectronics and Photovoltaics
* Passive Millimeter-Wave Imaging for Security and Safety via Si-based Backward Diode Sensors
* Molecular Electronics with Quantum Functional Circuit Elements using Conjugated Polymers
* Molecular Beam Epitaxial Growth for Strained Layers and Selective Area Growth
* Optoelectronic Materials, Devices, Device Integration, and Integrated Circuits
* Alternative Organometallic Precursors for MOCVD Growth
* Si-based Resonant Interband Tunnel Diodes for Quantum Functional Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
* Nanoelectronics: Si-based Quantum Dot Nanoswitches to Replace CMOS
* Conjugated Polymer-based Flexible Electronics, Foldable Optoelectronics and Photovoltaics
* Passive Millimeter-Wave Imaging for Security and Safety via Si-based Backward Diode Sensors
* Molecular Electronics with Quantum Functional Circuit Elements using Conjugated Polymers
* Molecular Beam Epitaxial Growth for Strained Layers and Selective Area Growth
* Optoelectronic Materials, Devices, Device Integration, and Integrated Circuits
* Alternative Organometallic Precursors for MOCVD Growth
Other Expertise
Consultant:
Consultant for Cambridge Display Technology Ltd., Cambridge, United Kingdom (developed about 12 invention disclosures during 4-month sabbatical leave, with at least 7 patents being filed internationally)
Legal Expert for two different international patent disputes on LED technology.
Consultant for Cambridge Display Technology Ltd., Cambridge, United Kingdom (developed about 12 invention disclosures during 4-month sabbatical leave, with at least 7 patents being filed internationally)
Legal Expert for two different international patent disputes on LED technology.
Future Research
Research Philosophy:
A common theme that extends across current and past work is either the exploration of novel devices using known materials, or developing known devices with new materials. A key facet of this work is a sensitivity to epitaxial growth parameters and their influence upon device performance.
Major Research Accomplishments
1. Invented a new negative differential resistance device based upon a thin titanium dioxide tunneling barrier juxtaposed with a bulk conjugated polymer layer. Room temperature operation with a peak-to-valley current ratio (PVCR) exceeding 53 was demonstrated and a logic circuit prototyped.
2. Highest reported zero-bias curvature coefficient of any Si-based backward diode (2-fold increase). A high nonlinearity directly correlates to high sensitivity for a passive millimeter-wave camera system suitable for detection of concealed weapons and vision through fog, smoke and other obscuring media for transportation safety.
3. Highest reported peak current density of any Si-based interband tunnel diode (3-fold increase). This opens the door to high power mixed-signal circuits on a Si platform.
4. Co-invented the first Si-based resonant interband tunnel diode (RITD) that operates at room temperature and a more general interband tunnel diode process that is compatible with CMOS and SiGe HBT technology. The development paves the way for tunnel diodes to extend CMOS technology on the International Technology Roadmap for Semiconductors (ITRS) and to enhance silicon mixed signal circuits for RF applications. Tunnel diode/transistor logic can reduce device count, lower power consumption and is highlighted on the ITRS Roadmap and Europe's Technology Roadmap for Emerging Research Devices and Nanoelectronics, respectively. This work has sparked a variety of international research groups to begin their own investigations. The Si-based RITD uses a combination of delta-doping, low temperature molecular beam epitaxy, intrinsic spacers and short post-growth annealing.
5. Demonstrated GeC photodiodes which showed significant surface-normal photoresponsivity to 1.3 m excitation for Si compatible optical communications, and the addition of C greatly suppressed leakage currents. (EE Times, September 1997).
6. First demonstration of band edge photoluminescence (PL) from bulk SiSn, SiC and GeC alloys grown by molecular beam epitaxy (MBE). Showed sharp no-phonon excitonic transitions with phonon replicas.
7. Developed a variety of optoelectronic integrated circuits (OEIC) by developing selective area MBE regrowth techniques and applying this towards numerous monolithic integrations (p-i-n-MODFET, laser-laser, HBT-laser, MODFET-laser etc.). For instance, monolithic p-i-n-MODFET circuits were shown to operate at 10 GHz bandwidths.
8. Developed an understanding of self-assembled quantum dot formation by the study of reflection high energy electron diffraction (RHEED) oscillations. From the RHEED studies, surface kinetics were examined for various alloys compositions and related to the constituents bond strengths He expanded the understanding of lattice mismatched strained layer systems by developing a model of the MBE growth nucleation of the InGaAs on GaAs system. Showed for the first time how strain modifies the growth kinetics and thermodynamics which governs the strained growth modes. Proved a favorability toward 3-D island growth under normal growth conditions when the misfit exceeds about 2% which enable self-assembled quantum dot formation. Also measured the shift in surface lattice constant during strained layer epitaxy and illustrated metastable growth at reduced substrate temperatures. Cited in Physics Today (January 1989) as making significant progress in 1988 towards the understanding of defect generation and growth nucleation of lattice mismatched strained layer systems.
A common theme that extends across current and past work is either the exploration of novel devices using known materials, or developing known devices with new materials. A key facet of this work is a sensitivity to epitaxial growth parameters and their influence upon device performance.
Major Research Accomplishments
1. Invented a new negative differential resistance device based upon a thin titanium dioxide tunneling barrier juxtaposed with a bulk conjugated polymer layer. Room temperature operation with a peak-to-valley current ratio (PVCR) exceeding 53 was demonstrated and a logic circuit prototyped.
2. Highest reported zero-bias curvature coefficient of any Si-based backward diode (2-fold increase). A high nonlinearity directly correlates to high sensitivity for a passive millimeter-wave camera system suitable for detection of concealed weapons and vision through fog, smoke and other obscuring media for transportation safety.
3. Highest reported peak current density of any Si-based interband tunnel diode (3-fold increase). This opens the door to high power mixed-signal circuits on a Si platform.
4. Co-invented the first Si-based resonant interband tunnel diode (RITD) that operates at room temperature and a more general interband tunnel diode process that is compatible with CMOS and SiGe HBT technology. The development paves the way for tunnel diodes to extend CMOS technology on the International Technology Roadmap for Semiconductors (ITRS) and to enhance silicon mixed signal circuits for RF applications. Tunnel diode/transistor logic can reduce device count, lower power consumption and is highlighted on the ITRS Roadmap and Europe's Technology Roadmap for Emerging Research Devices and Nanoelectronics, respectively. This work has sparked a variety of international research groups to begin their own investigations. The Si-based RITD uses a combination of delta-doping, low temperature molecular beam epitaxy, intrinsic spacers and short post-growth annealing.
5. Demonstrated GeC photodiodes which showed significant surface-normal photoresponsivity to 1.3 m excitation for Si compatible optical communications, and the addition of C greatly suppressed leakage currents. (EE Times, September 1997).
6. First demonstration of band edge photoluminescence (PL) from bulk SiSn, SiC and GeC alloys grown by molecular beam epitaxy (MBE). Showed sharp no-phonon excitonic transitions with phonon replicas.
7. Developed a variety of optoelectronic integrated circuits (OEIC) by developing selective area MBE regrowth techniques and applying this towards numerous monolithic integrations (p-i-n-MODFET, laser-laser, HBT-laser, MODFET-laser etc.). For instance, monolithic p-i-n-MODFET circuits were shown to operate at 10 GHz bandwidths.
8. Developed an understanding of self-assembled quantum dot formation by the study of reflection high energy electron diffraction (RHEED) oscillations. From the RHEED studies, surface kinetics were examined for various alloys compositions and related to the constituents bond strengths He expanded the understanding of lattice mismatched strained layer systems by developing a model of the MBE growth nucleation of the InGaAs on GaAs system. Showed for the first time how strain modifies the growth kinetics and thermodynamics which governs the strained growth modes. Proved a favorability toward 3-D island growth under normal growth conditions when the misfit exceeds about 2% which enable self-assembled quantum dot formation. Also measured the shift in surface lattice constant during strained layer epitaxy and illustrated metastable growth at reduced substrate temperatures. Cited in Physics Today (January 1989) as making significant progress in 1988 towards the understanding of defect generation and growth nucleation of lattice mismatched strained layer systems.
Industrial Relevance
Professional Activities:
Advisory Committee, Electronic Photonic Materials, Devices and Systems (EPMDS) in Calcutta, India (January 2006).
Conference Committee, 2005 International Semiconductor Device Research Symposium in Washington, DC (December 7-9, 2005).
Advisory Board, Microelectronics Engineering Department at Rochester Institute of Technology (2003 Â- present).
Conference Chairman, Â"Ohio State University Polymer Consortium Review,Â" in Columbus, OH (April 27, 2004).
Session Chair, Â"Nanoscale Fabrication and Self Assembled Systems,Â" 2003 Electronic Materials Conference (EMC) in Salt Lake City, UT (June 25-27, 2003).
Session Chair, Â"Testing and Reliability of Optoelectronic Devices,Â" SPIE's 2001 Photonics West in San Jose, CA (January 20-26, 2001).
Session Chair, Device Research Conference (DRC), Photodetectors and Transceivers in Denver, CO, June 2000.
Session Chair, Electronic Materials Conference (EMC), Novel Materials in Denver, CO, June 2000.
Co-Organizer, SRC's Si Tunnel Diode and CMOS/HBT Integration Workshop in Washington, DC (December 9, 1999).
Program Committee, IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA
Quantum Electronics & Compound Semiconductor Committee
Session Co-Chair "Quantum Effect Devices,Â" December 1998.
Program Committee, IEEE International Electron Devices Meeting (IEDM) in Washington, DC
Quantum Electronics & Compound Semiconductor Committee,
Session Co-Chair "Heterojunction Transistors and Photodetectors,Â" December 1997.
Program Committee, SPIE's Optoelectronics '97: Silicon-Based Monolithic and Hybrid
Optoelectronic Devices in San Jose, CA, Session Chair Â"Photodetectors,Â" February 1997.
Technical Reviewer:
Applied Physics Letters;
Cambridge University Press;
IEEE Journal of Quantum Electronics;
IEEE Photonics Technology Letters;
IEEE Electron Device Letters;
IEEE Transactions on Electron Devices;
Institute of Electrical Engineers (U.K);
Journal of the American Chemical Society;
Journal of Applied Physics;
Journal of Electronic Materials;
Materials Science in Semiconductor Processing;
Nanotechnology;
National Science Foundation;
Nuclear Instruments and Methods in Physics Research;
Proceedings of the IEEE;
Synthetic Metals.
Advisory Committee, Electronic Photonic Materials, Devices and Systems (EPMDS) in Calcutta, India (January 2006).
Conference Committee, 2005 International Semiconductor Device Research Symposium in Washington, DC (December 7-9, 2005).
Advisory Board, Microelectronics Engineering Department at Rochester Institute of Technology (2003 Â- present).
Conference Chairman, Â"Ohio State University Polymer Consortium Review,Â" in Columbus, OH (April 27, 2004).
Session Chair, Â"Nanoscale Fabrication and Self Assembled Systems,Â" 2003 Electronic Materials Conference (EMC) in Salt Lake City, UT (June 25-27, 2003).
Session Chair, Â"Testing and Reliability of Optoelectronic Devices,Â" SPIE's 2001 Photonics West in San Jose, CA (January 20-26, 2001).
Session Chair, Device Research Conference (DRC), Photodetectors and Transceivers in Denver, CO, June 2000.
Session Chair, Electronic Materials Conference (EMC), Novel Materials in Denver, CO, June 2000.
Co-Organizer, SRC's Si Tunnel Diode and CMOS/HBT Integration Workshop in Washington, DC (December 9, 1999).
Program Committee, IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA
Quantum Electronics & Compound Semiconductor Committee
Session Co-Chair "Quantum Effect Devices,Â" December 1998.
Program Committee, IEEE International Electron Devices Meeting (IEDM) in Washington, DC
Quantum Electronics & Compound Semiconductor Committee,
Session Co-Chair "Heterojunction Transistors and Photodetectors,Â" December 1997.
Program Committee, SPIE's Optoelectronics '97: Silicon-Based Monolithic and Hybrid
Optoelectronic Devices in San Jose, CA, Session Chair Â"Photodetectors,Â" February 1997.
Technical Reviewer:
Applied Physics Letters;
Cambridge University Press;
IEEE Journal of Quantum Electronics;
IEEE Photonics Technology Letters;
IEEE Electron Device Letters;
IEEE Transactions on Electron Devices;
Institute of Electrical Engineers (U.K);
Journal of the American Chemical Society;
Journal of Applied Physics;
Journal of Electronic Materials;
Materials Science in Semiconductor Processing;
Nanotechnology;
National Science Foundation;
Nuclear Instruments and Methods in Physics Research;
Proceedings of the IEEE;
Synthetic Metals.
Keywords
COS Keywords:
Electrical Engineering Or Electronics, Electronic Devices, Microelectromechanical Systems (MEMS), Telecommunications.Additional Terms:
Electrical Engineering, Electronic Devices, Microelectromechanical Research, Telecommunications.Languages
(Reading, Writing, Speaking)
German: (Basic, Basic, Basic)
Memberships
Institute of Electrical and Electronics Engineers
National Society of Professional Engineers
Optical Society of America
Honors and Awards
2006, Lumley Research Award,
College of Engineering,
Ohio State University
2000, Allan P. Colburn Prize
2000, Nominated for the Excellence in Teaching Award
University of Delaware
1998, Fellow,
Institute for Transforming Undergraduate Education
1998, Who's Who in Science and Engineering,
1998, Ultra Electronics Program Award of Excellence,
DARPA
1997, Senior Member,
Institute of Electrical and Electronics Engineers
1997, Nominated for the Excellence in Teaching Award
University of Delaware
1996, Faculty Early Career Development Award (CAREER),
National Science Foundation
1992, American Men & Women of Science,
Previous Positions
2008, Visiting Professor,
Interuniversity Microelectronics Center (IMEC)
2000-2003, Associate Professor,
Ohio State University,
College of Engineering,
Electrical Engineering
1999, Visiting Professor,
Max-Planck-Institut fur Polymerforschung,
Mainz, Germany
1999, Consultant/Visiting Professor,
University of Cambridge,
Cambridge Display Technology Ltd.
1997-2000, Associate Professor,
University of Delaware,
College of Engineering,
Electrical & Computer Engineering
1990-1992, AT&T Bell Laboratories, Post-doctorate
1992-1997, University of Delaware, Assistant Professor
Patents
Silicon-based Backward Diodes for Zero-biased Square Law Detection and Detector Arrays of Same,
Patent Number: 7361943,
2008,
Institution,
United States of America.
Strained Si-based Resonant Interband Tunneling Diode on SiGe Virtual Substrate With P-doping Cladding,
Patent Number: ,
2008,
Institution,
United States of America.
Strained Si-based Resonant Interband Tunneling Diode on SiGe Virtual Substrate With Outside Barriers,
Patent Number: ,
2008,
Institution,
United States of America.
Diffusion Barriers for Resonant Interband Tunnel Diodes,
Patent Number: 7297990,
2007,
Institution-owned,
United States of America.
Method of Making Interband Tunneling Diodes,
Patent Number: 7303969,
2007,
Institution,
United States of America.
Self-Aligned and Self-Limited Quantum Dot Nanoswitches and Methods Making Same,
Patent Number: 7015497,
2006,
Institution-owned,
United States of America.
Si-Based Resonant Interband Tunneling Diodes,
Patent Number: 6803598,
2004,
Institution-owned,
United States of America.
Tailored Shape of Self-Aligned and Self-Limited Quantum Dot Nanoswitches,
Patent Number: ,
2002,
Institution-owned,
United States of America.
Lateral Tunneling Injection HBT,
Patent Number: ,
2002,
Institution-owned,
United States of America.
Covering,
Patent Number: App. No. GB9928694.0,
1999,
,
United Kingdom.
One pending application to be filed by Cambridge Display Technology on light emitting polymers during consulting services,
Patent Number: ,
1999,
Institution-owned,
United Kingdom.
Fibre Optic Device,
Patent Number: App. No. GB9927594.3,
1999,
,
United Kingdom.
Light Emitting Devices,
Patent Number: App. No. GB9924515.1,
1999,
,
United Kingdom.
Method of Producing Organic Light-Emissive Devices,
Patent Number: App. No. GB9913695.4,
1999,
,
United Kingdom.
Display Devices,
Patent Number: App. No. GB9901334.4,
1999,
,
United Kingdom.
Asymmetric Contacted Metal-Semiconductor-Metal Photodetector,
Patent Number: 5780916,
1998,
Institution-owned,
United States of America.
Transparent/Opaque Electrode Metal-Semiconductor-Metal Photodetector,
Patent Number: 5777390,
1998,
Institution-owned,
United States of America.
Display Devices,
Patent Number: App. No. GB9827014.3,
1998,
,
United Kingdom.
Patterned Organic Light-Emitting Device,
Patent Number: App. No. GB9618476.7,
1996,
,
United Kingdom.
Buried Heterostructure Lasers Using a Single-step Metal Organic Chemical Vapor Deposition Growth Over Patterned Substrates,
Patent Number: 5208821,
1993,
Industry-owned,
United States of America.
InGaAs p-i-n Photodiodes with Transparent Cadmium Tin Oxide Contacts,
Patent Number: 5212395,
1993,
Industry-owned,
United States of America.
Funding Received
- National Science Foundation (NSF): Si-based Tunnel Diode Integration with CMOS and SiGe HBTs, $268,000, Sep 1999 to Feb 2004.
- Ohio Board of Regents: The Ohio Organic Semiconductor Consortium, $1,000,0000, Sep 2003 to Aug 2005.
- Ohio Board of Regents: The Ohio Nanoscale Patterning Consortium, $2,000,000, Sep 2003 to Aug 2005.
- Ohio Board of Regents: The Ohio Organic Semiconductor Consortium, $900,000, Sep 2001 to Aug 2003.
- National Science Foundation (NSF): GOALI: Si-Based Interband Tunneling Diodes for High-Speed Logic and Low Power Memory Applications, $214,500, Sep 1999 to Aug 2002.
- Naval Research Laboratory: Fabrication and Testing of Si-Based Resonant Interband Tunneling Diodes for Integration and Low Temperature Measurements, $21,500, May 1999 to Sep 1999.
- National Science Foundation (NSF): IMR: Acquisition of an Inductively Coupled Plasma Etching System, $284,000, Jul 2002 to Jun 2005.
- National Science Foundation (NSF): NIRT: Self-aligned and Self-Limited Quantum Dot Nanoswitches, $1,610,000, Jul 2001 to Jun 2005.
- University of Delaware Research Foundation: Silicon Germanium Carbon Alloy Based Heterostructure Devices, $29,973, Jul 1995 to Sep 1996.
- National Science Foundation (NSF): GOALI: RF Performance of Si-Based RITD for Mixed-Signal Applications, $282,000, Aug 2003 to 2009.
- National Science Foundation (NSF): IMR: Acquisition of Equipment for Polymeric Electroactive Materials Research and Education, $241,000, Aug 2000 to Jan 2002.
- National Science Foundation (NSF): CAREER: SiGeCSn Alloys and Heterostructures For Improved Performance Devices and Circuits, $240,000, Aug 1996 to Jul 2000.
- National Science Foundation (NSF): REG: Reactive Ion Etcher and Annealer For Advanced Devices and Circuits, $200,000, Aug 1996 to Jul 1997.
- National Science Foundation (NSF): SGER: Conjugated Polymer Transistors Based on Highly Oriented Structures for Active-Matrix Light Emitting Polymer Displays, $42,558, Apr 2001 to Mar 2002.
- Edison Welding Institute: Hermetic seals for organic semiconductors, 10,000, 2008 to 2008.
- NSF Connection One Center: Highly Nonlinear MM-wave Sensors for Passive Threat Detection, 55,489, 2007 to 2008.
- Ohio Department of Development: Wright Center for Photovoltaics Innovation and Commercialization (PVIC), 6,800,000, 2007 to 2010.
- University of Delaware Research Foundation: High Responsivity Metal-Semiconductor-Metal Photodiodes, $15,000, 1992 to 1994.
Publications
- Michael J. Word, Ilesanmi Adesida, Paul R. Berger (2003) Nanometer-Period Gratings in Hydrogen Silsesquioxane Fabricated by Electron Beam Lithography, Journal of Vacuum Science and Technology B, 21, L12-L15
- Niu Jin, Ronghua Yu, Sung-Yong Chung, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson, Roger Lake (13 Oct 2003) 151 kA/cm2 Peak Current Densities in Si/SiGe Resonant Interband Tunneling Diodes for Mixed-Signal Applications, Applied Physics Letters
- Cristian Rivas and Roger Lake, William R. Frensley, Gerhard Klimeck, Phillip E. Thompson, Karl D. Hobart, Sean L. Rommel, and Paul R. Berger, Full Band Modeling of the Excess Current in a Delta-Doped MBE Grown Silicon Tunnel Diode, Journal of Applied Physics, 1 Oct 2003
- Niu Jin, Sung-Yong Chung, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson, Cristian Rivas, Roger Lake, Stephen Sudirgo, Jeremy J. Kempisty, Branislav Curanovic, Sean L. Rommel, Karl D. Hirschman, Santosh K. Kurinec, Peter H. Chi and David S. Simons, Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes And Their Patterned Growth on PMOS Source/Drain Regions, Special Issue on “Nanoelectronics” in IEEE Transactions on Electron Devices, 50, 1876-1884, September 2003
- Sung-Yong Chung, Niu Jin, Anthony T. Rice, Paul R. Berger, Ronghua Yu, Z-Q. Fang, and Phillip E. Thompson, Growth Temperature and Dopant Species Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy, Journal of Applied Physics, pp. 9104-9110, June 2003
- Niu Jin, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson, Peter H. Chi and David S. Simons, SiGe Diffusion Barriers for P-doped Si/SiGe Resonant Interband Tunnel Diodes, Proceedings of the Eastman Conference on High Performance Devices, Aug 2002
- Paul R. Berger, Electrodes, Survey of Semiconductor Physics, Vol. II, Van Nostrand Rheinold, 2nd ed., edited by Karl Böer, New York, Ch. 37, 859-881, 2002
- Paul R. Berger, Doping and Junction Formation, Survey of Semiconductor Physics, Vol. II, Van Nostrand Rheinold, 2nd ed., edited by Karl Böer, New York, Ch. 36, 827-857, 2002
- Niu Jin, Paul R. Berger, Sean L. Rommel, Phillip E. Thompson, and Karl D. Hobart, A PNP Si Resonant Interband Tunnel Diode with Symmetrical NDR, Electronics Letters, pp. 1412-1414, 8 Nov 2001
- Cristian Rivas, Roger Lake, Gerhard Klimeck, William R. Frensley, Massimo V. Fischetti, Phillip E. Thompson, Sean L. Rommel and Paul R. Berger, Full Band Simulation of Indirect Phonon Assisted Tunneling in a Silicon Tunnel Diode with Delta-Doped Contacts, Applied Physics Letters, pp. 814-816, 5 Feb 2001
- K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, and P. R. Berger, A P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy, Journal of Vacuum Science and Technology B, pp. 290-293, Jan 2001
- P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi and D. S. Simons, Epitaxial Si-Based Tunnel Diodes, Thin Solid Films, pp. 145-150, 22 Dec 2000
- M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J. Kolodzey, A. C. Seabaugh and R. Lake, Current Voltage Characteristics of High Current Density Silicon Esaki Diodes Grown by Molecular Beam Epitaxy and the Influence of Thermal Annealing, IEEE Transactions on Electron Devices, pp. 1707-1714, September 2000
- Phillip E. Thompson, Karl D. Hobart, Mark Twigg, Glenn Jernigan, Thomas E. Dillon, Sean L. Rommel, Paul R. Berger, David S. Simons, Peter H. Chi, Roger Lake and Alan C. Seabaugh, Si Resonant Interband Tunnel Diodes Grown by Low Temperature Molecular Beam Epitaxy, Applied Physics Letters, pp. 1308-1310, 30 Aug 1999
- Sean L. Rommel, Thomas E. Dillon, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, Roger Lake, and Alan C. Seabaugh, Epitaxially Grown Si Resonant Interband Tunnel Diodes Exhibiting High Current Densities, IEEE Electron Device Letters, pp. 329-331, July 1999
- Xiaoping Shao, Ralf Jonczyk, M. W. Dashiell, D. Hits, B. A. Orner, A-S. Khan, K. Roe, J. Kolodzey, Paul R. Berger, M. Kaba and M. A. Barteau, K. M. Unruh, Strain Modification in Thin Si1-x-yGexCy Alloys on (100) Si for Formation of High Density and Uniformly Sized Quantum Dots, Journal of Applied Physics, pp. 578-582, 1 Jan 1999
- Sean L. Rommel, Thomas E. Dillon, Paul R. Berger, Roger Lake, Phillip E. Thompson, Karl D. Hobart, Alan C. Seabaugh, and David S. Simons, Si-Based Interband Tunneling Devices For High-Speed Logic and Low Power Memory Applications, Late News in the 1998 International Electron Devices Meeting Technical Digest, pp. 1035-1037, 8 Dec 1998
- Sean L. Rommel, Thomas E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, Roger Lake, Alan C. Seabaugh, Gerhard Klimeck, and Daniel K. Blanks, Room Temperature Operation of Epitaxially Grown Si/Si0.5Ge0.5/Si Resonant Interband Tunneling Diodes, Applied Physics Letters, pp. 2191-2193, 12 Oct 1998
- M. W. Dashiell, R. T. Troeger, K. J. Roe, A. S. Khan, B. Orner, J. O. Olowolafe, P. R. Berger, R. G. Wilson, and J. Kolodzey, Electrical and Optical Properties of Phosphorous Doped Ge1-yCy, Thin Solid Films, pp. 47-50, 26 May 1998
- Xiaoping Shao, S. L. Rommel, B. A. Orner, H. Feng, M. W. Dashiell, R. T. Troeger, J. Kolodzey, Paul R. Berger, and Thomas Laursen, 1.3 Micron Photoresponsivity in Si-Based Ge1-xCx Photodiodes, Applied Physics Letters, pp. 1860-1862, 13 Apr 1998
- Nareen Wright, Al-Sameen Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, Photoluminescence of SiSnC Alloys Grown on (100) Si Substrates, Materials Research Society Symposium Proceedings, Vol. 533, pp. 327-332, 1998
- Wei Gao, Paul R. Berger, George J. Zydzik, Henry M. O'Bryan, Deborah L. Sivco, and Alfred Y. Cho, In0.53Ga0.47As MSM Photodiodes with Transparent CTO Schottky Contacts and Digital Superlattice Grading, IEEE Transactions on Electron Devices, pp. 2174-2179, December 1997
- Xiaoping Shao, S. L. Rommel, B. A. Orner, J. Kolodzey, and Paul R. Berger, A p-Ge1-xCx/n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy, IEEE Electron Device Letters, pp. 411-413, September 1997
- Al-Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, Near Band Edge Photoluminescence from Pseudomorphic Tensially Strained Si0.985C0.015 Alloy, Thin Solid Films, pp. 122-124, 15 Feb 1997
- Xiaoping Shao, S. L. Rommel, B. A. Orner, Paul R. Berger, J. Kolodzey, and K. M. Unruh, Low Resistance Ohmic Contacts to p-Ge1-xCx on Si, IEEE Electron Device Letters, pp. 7-9, January 1997
- Sean L. Rommel, David N. Erby, Wei Gao, Paul R. Berger, G. Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, Equivalent Circuit Modeling of Metal-Semiconductor-Metal Photodiodes with Transparent Conductor Electrodes, Proceedings of SPIE's Optoelectronics '97: Photodetectors - Materials and Devices II, Vol. 2999, pp. 86-91, 1997
- Xiaoping Shao, S. L. Rommel, B. A. Orner, H. Feng, M. Dashiell, J. Kolodzey, and Paul R. Berger, Ge1-xCx/Si Heterojunction Photodiodes, Proceedings of SPIE's Optoelectronics '97: Silicon-Based Monolithic and Hybrid Optoelectronic Devices, Vol. 3007, pp. 162-169, 1997
- Wei Gao, Paul R. Berger, Matthew H. Ervin, Jagadeesh Pamulapati, Richard T. Lareau, Stephen Schauer, Liquid Phase Epitaxial Growth of InGaAs on InP Using Rare Earth Treated Melts, Journal of Applied Physics, pp. 7094-7103, 15 Dec 1996
- Al-Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, Band Edge Photoluminescence from Pseudomorphic Si0.96Sn0.04 Alloy, Applied Physics Letters, 68, 3105-3107, 27 May 1996
- Paul R. Berger, Metal-Semiconductor-Metal Photodiodes for Lightwave Communications and Detection, IEEE Potentials, 25-29, April 1996
- J. Pamulapati, P. K. Bhattacharya, J. Singh, P. R. Berger, C. W. Snyder, B. G. Orr, and R. L. Tober, Realization of In-Situ Sub Two-Dimensional Quantum Structures by Strained Layer Growth Phenomena in the InxGa1-xAs/GaAs System, Journal of Electronic Materials, pp. 479-483, March 1996
- B. Orner, A. Khan, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, R. G. Wilson, P. R. Berger, and J. Kolodzey, Optical Properties of Ge1-yCy Alloys, Journal of Electronic Materials, pp. 297-300, February 1996
- Wei Gao, Paul R. Berger, Robert G. Hunsperger, Matthew Ervin, Jagadeesh Pamulapati, Stephen Schauer, and Richard T. Lareau, Liquid Phase Epitaxial Growth Process of InGaAs on InP with Rare Earth Treatment, Proceedings of SPIE's OE/LASE '96 International Symposium, Novel Optoelectronic Materials and Devices in San Jose, CA, Vol. 2685, pp. 171-177, 1996
- F. Chen, B. A. Orner, D. Guerin, A. Khan, P. R. Berger, S. Ismat Shah, and J. Kolodzey, Current Transport Characteristics of SiGeC/Si Heterojunction Diode, IEEE Electron Device Letters, pp. 589-591, 1996
- J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, and K. M. Unruh, Optical and Electronic Properties of SiGeC Alloys Grown on Si Substrates, Journal of Crystal Growth, pp. 386-391, December 1995
- Wei Gao, Paul R. Berger, Robert G. Hunsperger, G. Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, Transparent and Opaque Schottky Contacts on In0.52Al0.48As, Applied Physics Letters, 66, 3471-3473, 19 Jun 1995
- Paul R. Berger, Photoluminescence, Handbook of Thin Solid Film Process Technology, (Institute of Physics, Philadelphia, PA), edited by D. Glocker, Eastman Kodak Research Laboratories, and S. I. Shah, I. I. du Pont de Nemours & Company, D2.4:1-D2.4:8, 1995
- D. T. Nichols, W. S. Hobson, P. R. Berger , N. K. Dutta, P. R. Smith, J. Lopata, D. L. Sivco, A. Y. Cho, Monolithically Integrated Optical Receivers and Transmitters, Institute of Physics Conference Series - Compound Semiconductors, pp. 573-578, 1995
- Wei Gao, Al-Sameen Khan, Paul R. Berger, Robert Hunsperger, George Zydzik, H. M. O'Bryan, D. Sivco, and A. Y. Cho, In0.53Ga0.47As Metal-Semiconductor-Metal Photodiodes with Transparent Cadmium Tin Oxide Schottky Contacts, Applied Physics Letters, pp. 1930-1932, 10 Oct 1994
- Paul R. Berger, S. N. G. Chu, R. A. Logan, E. Byrne, D. Coblentz, James Lee III, Nhan T. Ha, and N. K. Dutta, Substrate Orientation Effects on Dopant Incorporation in InP Grown by Metalorganic Chemical Vapor Deposition, Erratum: Journal of Applied Physics, p. 2562, 15 Aug 1994
- Wei Gao, Paul R. Berger, Robert G. Hunsperger, G. Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, Transparent and Opaque Schottky Contacts on In0.52Al0.48As, Applied Physics Letters, pp. 3471-3473, 19 Jun 1994
- D. Nichols, J. Lopata, W. S. Hobson, N. K. Dutta, P. R. Berger, D. Sivco, and A. Y. Cho, Monolithic GaAs/AlGaAs Optical Transmitter Using a Single Growth Step, Electronics Letters, 30, 490-491, 17 Mar 1994
- D. T. Nichols, J. Lopata, W. S. Hobson, P. R. Berger, P. R. Smith, N. K. Dutta, D. L. Sivco, A. Y. Cho, Integrated Optical Receivers and Transmitters for Use in Wide-Bandwidth Optical Transmission Systems, Proceedings of the 1994 Optical Fiber Communication Conference, San Jose, CA, p. 34, 1994
- Wei Gao, Al-Sameen Khan, Paul R. Berger, Robert Hunsperger, George Zydzik, H. M. O'Bryan, D. Sivco, A. Y. Cho, Long Wavelength Metal-Semiconductor-Metal Photodiodes with Transparent Cadmium Tin Oxide Schottky Contacts, Proceedings of the LEOS 1994 Summer Topical Meeting, Lake Tahoe, NV, pp. 63-64, 1994
- N. K. Dutta, J. Lopata, P. R. Berger, S. J. Wang, P. R. Smith, D. Sivco, and A. Y. Cho, 10 GHz Bandwidth Monolithic pin Modulation-Doped Field Effect Transistor Photoreceiver, Applied Physics Letters, pp. 2115-2116, 11 Oct 1993
- D. Nichols, N. K. Dutta, P. R. Berger, P. R. Smith, D. Sivco, and A. Y. Cho, Monolithic GaAs/AlGaAs p-i-n MESFET Photoreceiver Using a Single Molecular Beam Epitaxy Growth Step, Electronics Letters, pp. 1133-1134, 10 Jun 1993
- Paul R. Berger, S. N. G. Chu, R. A. Logan, E. Byrne, D. Coblentz, James Lee III, Nhan T. Ha, and N. K. Dutta, Substrate Orientation Effects on Dopant Incorporation in InP Grown by Metalorganic Chemical Vapor Deposition, Journal of Applied Physics, pp. 4095-4097, 15 Apr 1993
- Paul R. Berger, Niloy K. Dutta, Dexter A. Humphrey, Peter R. Smith, Sheunn-Jyi Wang, R. K. Montgomery, D. Sivco, and A. Y. Cho, 8-Element Linear Array of Monolithic pin-MODFET Photoreceivers Using Molecular Beam Epitaxial Regrowth, IEEE Photonics Technology Letters, pp. 63-66, January 1993
- Paul R. Berger, Niloy K. Dutta, George Zydzik, Hank M. O'Bryan, Ursula Keller, Peter R. Smith, John Lopata, D. Sivco, and A. Y. Cho, In0.53Ga0.47As p-i-n Photodiodes with Transparent Cadmium Tin Oxide Contacts, Applied Physics Letters, pp. 1673-1675, 5 Oct 1992
- Paul R. Berger, Niloy K. Dutta, Dexter A. Humphrey, Peter R. Smith, Sheunn-Jyi Wang, R. K. Montgomery, D. Sivco, and A. Y. Cho, 1.0 GHz Monolithic pin-MODFET Photoreceiver Using Molecular Beam Epitaxial Regrowth, IEEE Photonics Technology Letters, pp. 891-894, August 1992
- J. Lopata, N. K. Dutta, W. S. Hobson and P. R. Berger, Buried Heterostructure Lasers Using a Single-step Metal Organic Chemical Vapor Deposition Growth Over Patterned Substrates, Proceedings of SPIE, pp. 117-121, 1992
- Naresh Chand, Paul R. Berger, and Niloy K. Dutta, Effects of Substrate Tilting in Substantial Improvement of DC Performance of AlGaAs/GaAs n-p-n DHBT's Grown by MBE, IEEE Transactions on Electron Devices, pp. 2717-2718, December 1991
- Paul R. Berger, N. K. Dutta, D. L. Sivco, and A. Y. Cho, A GaAs Quantum Well Laser and Heterojunction Bipolar Transistor Integration Using Molecular Beam Epitaxial Regrowth, Applied Physics Letters, pp. 2826-2828, 25 Nov 1991
- Paul R. Berger, Naresh Chand, and Niloy K. Dutta, An AlGaAs Double Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy, Applied Physics Letters, pp. 1099-1101, 26 Aug 1991
- Naresh Chand, Paul R. Berger, and Niloy K. Dutta, Substantial Improvement by Substrate Misorientation in DC Performance of Al0.5Ga0.5As/GaAs/ Al0.5Ga0.5As Double Heterojunction NpN Bipolar Transistors Grown by Molecular Beam Epitaxy, Applied Physics Letters, pp. 186-188, 8 Jul 1991
- Paul R. Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand, Monolithically Peltier-cooled Vertical-cavity Surface Emitting Lasers, Applied Physics Letters, pp. 117-119, 1 Jul 1991
- Paul R. Berger, N. K. Dutta, J. Lopata, S. N. G. Chu, and Naresh Chand, Monolithic Integration of GaAs and In0.2Ga0.8As Lasers By Molecular Beam Epitaxy on GaAs, Applied Physics Letters, pp. 2698-2700, 10 Jun 1991
- Yousef Zebda, Richard Lai, Pallab Bhattacharya, Dimitris Pavlidis, Paul R. Berger, and Timothy L. Brock, Monolithically Integrated InP-based Front End Photoreceivers, IEEE Transactions on Electron Devices, pp. 1324-1333, June 1991
- N. K. Dutta, J. Lopata, P. R. Berger, D. L. Sivco, and A. Y. Cho, Performance Characteristics of InGaAs/GaAs Large Optical Cavity Quantum Well Lasers, Electronics Letters, pp. 680-682, 11 Apr 1991
- Paul R. Berger, Pallab Bhattacharya, and Shantanu Gupta, A Waveguide Directional Coupler With A Nonlinear Coupling Media, Special Issue of Journal of Quantum Electronics on Photonic Devices and Circuits, pp. 788-795, March 1991
- J. Pamulapati, R. Lai, G. I. Ng, Y. C. Chen, P. R. Berger, P. K. Bhattacharya, J. Singh, and D. Pavlidis, The Relation of the Performance Characteristics of Pseudomorphic In0.53+xGa0.47-xAs/In0.52Al0.48As (0 < x < 0.32) Modulation Doped Field Effect Transistors to Molecular Beam Epitaxial Growth Modes, Journal of Applied Physics, pp. 347-350, 1 Jul 1990
- Paul R. Berger, Y. C. Chen, J. Singh, and Pallab K. Bhattacharya, Growth Modes of (100) InxGa1-xAs Growth On GaAs/InP Below Critical Thickness - Consequences For Pseudomorphic MODFETs, Institute of Physics Conference Series, No. 106(Ch. 4), 183-188, 1990
- D. Biswas, P. R. Berger, and P. K. Bhattacharya, Recombination Velocity at Molecular Beam Epitaxial GaAs Regrown Interfaces, Journal of Applied Physics, 2571-2573, 15 Mar 1989
- D. Biswas, P. R. Berger, U. Das, J. E. Oh, and P. K. Bhattacharya, Investigation of the Interface Region Produced by Molecular Beam Epitaxial Regrowth, Journal of Electronic Materials, 137-142, March 1989
- J. Pamulapati, P. Berger, K. Chang, J. Oh, Yi Chen, J. Singh, and P. Bhattacharya, Growth Phenomena and Characteristics of Strained IxGa1-xAs on GaAs, Journal of Crystal Growth, 193-196, 1989
- Utpal Das, Yi Chen, Pallab Bhattacharya, and Paul R. Berger, Orientation-Dependent Phase Modulation in InGaAs/GaAs Multiquantum Well Waveguides, Applied Physics Letters, 2129-2131, 28 Nov 1988
- Paul R. Berger, Kevin Chang, Pallab Bhattacharya, Jasprit Singh and K. K. Bajaj, Role of Strain and Growth Conditions on the Growth Front Profile of InxGa1-xAs on GaAs During the Pseudomorphic Growth Regime, Applied Physics Letters, 53, 684-686, 22 Aug 1988
- D. Biswas, P. R. Berger, U. Das, J. E. Oh, and P. K. Bhattacharya, Investigation of the Interface Region Produced by Molecular Beam Epitaxial Regrowth, Journal of Electronic Materials, S13, July 1988
- Paul R. Berger, Yi Chen, Pallab K. Bhattacharya, Jagadeesh Pamulapati, and G. C. Vezzoli, Demonstration of All-Optical Modulation in a Vertical Guided Wave Nonlinear Coupler, Applied Physics Letters, 52, 1125-1127, 4 Apr 1988
- K. H. Chang, P. R. Berger, R. Gibala, P. K. Bhattacharya, J. Singh, J. F. Mansfield, and R. Clarke, Molecular Beam Hetero-Epitaxial Growth of Strained InGaAs on GaAs, Dislocations and Interfaces in Semiconductors, ed. K. Rajan, J. Narayan, and D. Ast, 157-171, 1988
- Paul R. Berger, Kevin Chang, Pallab K. Bhattacharya, Jasprit Singh, and K. K. Bajaj, In-Situ RHEED Studies to Understand the Dislocation Formation Process in Growth of InGaAs on GaAs, Proceedings of SPIE, 10-13, 1988
- Utpal Das, Paul R. Berger, and Pallab K. Bhattacharya, InGaAs/GaAs Multiquantum Well Electro-Absorption Modulator with Integrated Waveguide, Optics Letters, 820-822, October 1987
- Kevin Chang, Paul R. Berger, Jasprit Singh, and Pallab K. Bhattacharya, Molecular Beam Epitaxial Growth and Luminescence of InxGa1-xAs/ InxAl1-xAs Multiquantum Wells On GaAs, Applied Physics Letters, 51, 261-263, 27 Jul 1987
- Kevin Chang, Paul R. Berger , Pallab K. Bhattacharya, Jasprit Singh, D. C. van Aken and R. Gibala, Molecular Beam Heteroepitaxial Growth of InxGa1-xAs/ InxAl1-xAs Multi-quantum Wells On GaAs with in-situ RHEED Studies, Journal of Electronic Materials, 16, A21, July 1987
- Paul R. Berger, Kevin Chang, Pallab K. Bhattacharya, and Jasprit Singh, A Study of Strain Related Effects in the MBE Growth of InxGa1-xAs on GaAs Using RHEED, Journal of Vacuum Science and Technology B, 1162-1166, July 1987
- Paul R. Berger, Pallab K. Bhattacharya, and Jasprit Singh, A Comparative Study of the Growth processes of GaAs, AlGaAs, InGaAs and InAlAs Lattice Matched and Non-lattice Matched Semiconductors Using High Energy Electron Diffraction, Journal of Applied Physics, 61, 2856-2860, 15 Apr 1987
- K. S. Seo, P. R. Berger, G. P. Kothiyal, and P. K. Bhattacharya, Anomalous Effects of Lamp Annealing in Modulation-doped In0.53Ga0.47As / In0.52Al0.48As and Si-implanted In0.53Ga0.47As, IEEE Transactions on Electron Devices, ED-34, 235-240, February 1987
- F-Y. Juang, W-P. Hong, P. R. Berger, P. K. Bhattacharya, U. Das, and J. Singh, Growth and Properties of In0.52Al0.48As/ In0.53Ga0.47As GaAs:In and InGaAs/GaAs Multilayers, Journal of Crystal Growth, 81, 373-377, 1987
- Pallab K. Bhattacharya, Sunada Dhar, Paul Berger, and Feng-Yuh Juang, Low Defect Densities in Molecular Beam Epitaxial GaAs Achieved by Isoelectronic In Doping, Applied Physics Letters, 470-472, 25 Aug 1986
- Y. Nashimoto, S. Dhar, W-P. Hong, A. Chin, P. Berger, and P. K. Bhattacharya, Investigation of Molecular Beam Epitaxial In0.53Ga0.47As Regrown on Liquid Phase Epitaxial In0.53Ga0.47As /InP, Journal of Vacuum Science and Technology B, 540-542, March 1986
Profile Details
Last Updated: 12/18/2008
COS Expertise ID #501223
Reference this profile directly: http://myprofile.cos.com/bergerp23
Individual Expertise profile of Paul R. Berger, Copyright Paul R. Berger.
© COS ExpertiseTM, 2009, ProQuest LLC All rights reserved.