Prof. Paul L. Bergstrom |
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Michigan Technological University College of Engineering Electrical & Computer Engineering Associate ProfessorAppointed: 2006 |  |
Mailing Address121 EERC Building 1400 Townsend Drive Houghton, Michigan 49931United States | Contact Information |
Qualifications
Ph.D., University of Michigan, Electrical Engineering, 1996.
M.S., University of Michigan, Electrical Engineering, 1993.
B.S., University of Minnesota, Electrical Engineering, 1989.
Expertise and Research Interests
My research interests include the integration of microelectromechanical (MEMS) elements with microelectronics processing in ways which minimize the impact of the MEMS processing on the standard microelectronic (CMOS, BiCMOS, etc.) process and device parameters. This research reflects the drive towards a more globally integrated microsystem technology that allows multiple MEMS technologies to be utilized in an integrated fashion. This effort has led to research to pursue ways to integrated post-CMOS technologies while maintaining the good MEMS materials properties required for applications such as accelerometers, other inertial sensors, pressure sensors, radio frequency (RF) resonating elements, and actuator structures like micromirrors, liquid and gas valves, pumps, etc.
A related area of interest is the development of low temperature MEMS structural materials and localized annealing processes for integrated microsystem technologies. New and novel deposition and material processing may allow for good mechanical and electrical properties at temperatures compatible with post-CMOS integration.
Recent areas of research activity include the development of nanoscaled processing and characterization for quantum dot based electronic devices, such as the single electron transistor. Effort to develop SET devices functional at room temperature has been demonstrated by my research group, utilizing beam based fabrication and nanoimprint based processing to demonstrate the functional characterization of thousands of SET devices at room temperature and below. The quantum dot and quantum wire based electronic development has led to several applications for biochemical and chemical sensing platforms.
An additional area of significant research activity is in developing porous semiconductor materials for chemical, optical, and thermal microsystems. My research has demonstrated morphological control of macroporous silicon for chemical microsystems and is actively demonstrating electroosmotic pumping limits based on a highly ordered 20nm mesoporous silica membrane.
A related area of interest is the development of low temperature MEMS structural materials and localized annealing processes for integrated microsystem technologies. New and novel deposition and material processing may allow for good mechanical and electrical properties at temperatures compatible with post-CMOS integration.
Recent areas of research activity include the development of nanoscaled processing and characterization for quantum dot based electronic devices, such as the single electron transistor. Effort to develop SET devices functional at room temperature has been demonstrated by my research group, utilizing beam based fabrication and nanoimprint based processing to demonstrate the functional characterization of thousands of SET devices at room temperature and below. The quantum dot and quantum wire based electronic development has led to several applications for biochemical and chemical sensing platforms.
An additional area of significant research activity is in developing porous semiconductor materials for chemical, optical, and thermal microsystems. My research has demonstrated morphological control of macroporous silicon for chemical microsystems and is actively demonstrating electroosmotic pumping limits based on a highly ordered 20nm mesoporous silica membrane.
Other Expertise
My expertise includes the development of wafer fabrication infrastructure in support of substrate processing for MEMS, microsystem, and optical microsystem technologies.
My expertise also includes electronic CAD device design library definition, accelerometer, pressure sensor, thin film gas sensor, and CMOS device characterization, and standard cell layout.
My expertise also includes electronic CAD device design library definition, accelerometer, pressure sensor, thin film gas sensor, and CMOS device characterization, and standard cell layout.
Industrial Relevance
The development of microsystem technologies that decouple sensor or actuator processing from microelectronic processing supports further integration of technological functionality on chip versus multiple component configurations for system assembly whileminimizing process risk for integration.
Keywords
COS Keywords:
Aerospace Engineering, Electrical Engineering or Electronics, Semiconductors.Additional Terms:
Accelerometer, Biochemical Sensor, Electrochemical Sensor, Inertial Sensor, Mems, Micro Electro Mechanical Systems, Microsystems, Porous Silicon, Porous Titania, Pressure Sensor, Sensor, Single Electron Transistor, Water Quality Monitoring.Languages
(Reading, Writing, Speaking)
English: (Fluent, Fluent, Fluent)
German: (Functional, Functional, Basic)
Memberships
American Society for Engineering Education
Electrochemical Society
Institute of Electrical and Electronics Engineers
Honors and Awards
1993-1996,
SRC Graduate Fellow,
Semiconductor Research Corporation,
University of Michigan,
Electrical Engineering, Solid-State Electronics
Previous Positions
2000-2006, Assistant Professor,
Michigan Technological University,
College of Engineering,
Electrical and Computer Engineering
1996-2000, Principle Staff Engineer,
Motorola, Inc.,
Semiconductor Product Sector,
Sensor Products
1989-1990, Design Engineer,
Rosemount, Inc.,
Air Products,
Aerospace
Patents
Magnetic Annealing of Ferromagnetic Thin Films using Induction Heating,
Patent Number: 7193193,
2007,
Institution,
United States of America.
Induction Heating of Thin Films,
Patent Number: 6878909,
2005,
Institution,
United States of America.
Capacitively Sensed Micromachined Component and Method of Manufacturing,
Patent Number: 6544810,
2003,
Industry,
United States of America.
Method of Manufacturing a Semiconductor Wafer Level Package,
Patent Number: 6465281,
2002,
Industry,
United States of America.
Semiconductor Wafer Level Package,
Patent Number: 00961925.5-2203-US0025315,
2002,
Industry,
Germany.
Sensor and Method of Use,
Patent Number: 6318174,
2001,
Industry-owned,
United States of America.
Sensor and Method of Use,
Patent Number: 6105428,
2000,
Industry-owned,
United States of America.
Semiconductor Device Having a Cavity and Method of Making,
Patent Number: 6087701,
2000,
Industry-owned,
United States of America.
Funding Received
- National Science Foundation (NSF): NUE: A Nanotechnology Enterprise, 2008 to 2009.
- Department of the Army: Intelligent Orthopedic Fracture Implant System (IOFIS), 2008 to 2010.
- General Dynamics: Enterprise: 2008 HFE/Motion Sickness Study, 2008 to 2008.
- State of Michigan: Optimizing Chemo-Mechanical Structure for MEMS Chemical Vapor Sensor Arrays, 2007 to 2009.
- V.I.O. Inc.: Wearable Video Capture System/POV, 2007 to 2008.
- United States Department of Defense (DOD): Center for Nanomaterials Research, 2003 to 2008.
Publications
- P. S. K. Karre, M. Acharya, W. R. Knudsen, P. L. Bergstrom (2007) Single Electron Transistor based Gas Sensing with Tungsten Nano Particles at Room Temperature, IEEE Sensors Journal, Sensors-02105-2007, In Press
- P. S. K. Karre, P. L. Bergstrom, G. Mallick, S. P. Karna (2007) Room Temperature Operational Single Electron Transistor Fabricated by Focused Ion Beam Deposition, Journal of Applied Physics, 102, 024316
- J. Z. Wallner, P. L. Bergstrom (2007) A porous silicon based particle filter for microsystems, physica status solidi a, 204 (5), 1469-1473
- J. Z. Wallner, K. S. Hunt, H. Obanionwu, M. C. Oborny, P. L. Bergstrom, E. T. Zellers (2007) An integrated vapor source with a porous silicon wick, physica status solidi a, 204 (5), 1449-1453
- J. Z. Wallner, N. Nagar, C. R. Friedrich, P. L. Bergstrom (2007) Macro porous silicon as pump media for electro-osmotic pumps, physica status solidi a, 204 (5), 1327-1331
- P. L. Bergstrom, M. L. Trombley, G. G. Li (2005) Chapter 28: Inertial Sensors, The MEMS Handbook, Second Edition, New York, NY, CRC Press, 34 pages, ISBN=0-8493-9139-3 (bookchapter)
- J. Zheng, M. Christophersen, P. L. Bergstrom (2005) Formation Technique for Macroporous Morphology Superlattice, physica status solidi a, 202 (8), 1402-1406
- J. Zheng, M. Christophersen, P. L. Bergstrom (2005) Thick Macroporous Membranes Made of p-type Silicon, physica status solidi a, 202 (8), 1662-1667
- P. L. Bergstrom, G. G. Li (September 2001) Chapter 24: Inertial Sensors, in The MEMS Handbook, ed. Mohammed Gad-el-Hak, CRC Press, First Edition, New York, NY, CRC Press, 30 pages (bookchapter)
- P. L. Bergstrom (October 2000) Inertial Sensors: the Drive for Aspect Ratio, Electrochemical Society Proc., Phoenix, 107-115 pages
- P. L. Bergstrom, D. R. Bosch, and G. Averett (September 1999) Investigation of Thick Polysilicon Processing for MEMS Transducer Fabrication, Proc. 1999 SPIE Symp. on Micromachining and Microfabrication: Materials and Device Characterization in Micromachining II, 87-96 pages
- G. X. Li, P. L. Bergstrom, M.-L. Ger, J. Foerstner, J. E. Schmiesing, F. A. Shemansky, D. Mahadevan, and M. K. Shah (August 1998) Low Stress Packaging of a Micro-Machined Accelerometer, Digest 3rd Int'l Symp. on Electronic Packaging Technology, Beijing, 553-562 pages
- P. L. Bergstrom (1998) Method to Form Recessed Cavities with Mirror Flat Bottom Surfaces, Motorola Technical Developments, 34, 91-93
- P. L. Bergstrom, S. V. Patel, J. W. Schwank, K. D. Wise (1997) A Micromachined Surface Work-function Gas Sensor for Low-pressure Oxygen Detection, Sensors and Actuators B, 43 (3), 195-204
- S. A. Audet, K. M. Edenfeld, and P. L. Bergstrom, Motorola wafer-level packaging for integrated sensors, Micromachine Devices, 2(1), 1, 3, January 1997
- P. L. Bergstrom and K. D. Wise (July 1996) Oxygen Sensing using Work-Function Gas Sensors, Digest 6th International Meeting on Chemical Sensors (IMCS'96), Gaithersburg, 211 pages
- P. L. Bergstrom, R. Merchant, K. D. Wise, and J. W. Schwank (June 1995) Dielectric Membrane Technology for Micromachined Conductivity and Work-Function Gas Sensors, Digest International Conference on Solid-State Sensors and Actuators (Transducers'95), Stockholm, 993-996 pages
- P. L. Bergstrom, J. Ji, Y. Liu, M. Kaviany, K. D. Wise (1995) Thermally-driven Phase-change Microactuation, IEEE Journal of Microelectromechanical Systems, 4, 10-17
- J. Ji, J. Chaney, M. Kaviany, P. L. Bergstrom, and K. D. Wise (June 1991) Microactuation based on Thermally-Driven Phase-Change, Digest International Conference on Solid-State Sensors and Actuators (Transducers'91), San Francisco, 1037-1040 pages
- P. L. Bergstrom, T. Tamagawa, and D. L. Polla (February 1990) Design and Fabrication of Micromechanical Logic Elements, Proceedings IEEE Micro Electro Mechanical Systems Workshop, Napa Valley, 15-20 pages
- P. Bergstrom, D. Polla, and T. Tamagawa (December 1989) Micromechanical Logic, Digest IEEE International Electron Devices Meeting, Washington, D. C., 878-879 pages
Profile Details
Last Updated: 2/24/2010
COS Expertise ID #327431
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