Prof. Sergei L. Pyshkin |
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Academy of Sciences of Moldova Institute of Applied Physics Materials Science Principal InvestigatorAppointed: 2001 Clemson University Engineering and Science Center for Optical Materials Science and Engineering Technologies Fulbright Fellow, Adjunct ProfessorAppointed: 2005 |  |
Mailing AddressAcademy Str. 5, Institute of Applied Physics Kishinev, MD2028Moldova | Contact Information |
Qualifications
D.Sc., Moscow State University, Optics, 1978.
Ph.D., State University of Moldova, Physics of Semiconductors and Dielectrics, 1967.
Expertise and Research Interests
The works deal with non-linear optics (multi-quantum absorption), electron and phonon transport phenomena, photoconductivity and light scattering, luminescence, materials science including nanotechnology, bulk crystal and thin film growth, combined molecular beam and laser assisted epitaxies, lasers for medicine, scientific instrument making (boxcar-integrators and solid-state matrix receivers).
Search for a research and lecturing professor position in physics and materials science where my top qualification, new projects and rich experience as well as a unique author's collection of long-time ordered pure and GaP:N single crystals will be used for relevant technology transfer, training of personnel and creation of new generation of solar cells, EL displays and photomatrix receivers.
Search for a research and lecturing professor position in physics and materials science where my top qualification, new projects and rich experience as well as a unique author's collection of long-time ordered pure and GaP:N single crystals will be used for relevant technology transfer, training of personnel and creation of new generation of solar cells, EL displays and photomatrix receivers.
Other Expertise
1986-2001: Head of the Laser Research Laboratory, Institute of Applied Physics, Academy of Sciences of Moldova.
2001-2002: Senior scientist and expert in international cooperation of The Scientific Research Center, Ministry of Defense of Moldova.
1999-2005: Senior lecturer and full professor at Free International University of Moldova (Courses: Materials for Electronics, Technology of Semiconductors, Solid State Physics, Microelectronics Technology, Application of Lasers).
Lectures and seminars for scientists and post graduate students: Photoconductivity and Luminescence of Semiconductors, Multi-Quantum Absorption, Bound Excitons of High Density, Long-Time Ordering in Semiconductors, Optical Properties of Ternary and Multinary Semiconducors, Combined Epitaxial Methods for Heterostructures with Big Lattice Mismatch, Some Application of Lasers in Medicine.
More than 150 scientific papers in scientific press, 2 monographs and 10 patents in physics and technology of semiconductors, optics and laser application in science, industry and medicine.
Most significant professional accomplishments:
1964-1966: synthesis and single crystal growth for unique collection of semiconducting doped Gallium Phosphide (GaP), elaboration of methods for long-last monitoring of their properties during 30-50 years period - now it is the main element of the proposed activity.
1967 - delivering of the first industrial lasers to Moldova and start of laser based R&D in science, high-tech and medicine.
1967 - present time: monitoring of long-time processes in GaP single crystals, discovering of long-time ordering in its crystal lattice and impurity disposition.
1967-1974: discovering of new phenomena in non-linear optics (multi-quantum processes in semiconductors) and in bound excitons of high density, inventions in laser application for microelectronics and medicine.
1986 - initiated by academician Alexander M. Prokhorow, Nobel Prize Laureate opening in Moldova of the Laser Research Laboratory headed by S. Pyshkin.
1989-1993: joint investigations with Italian colleagues at Rome, Milan, Parma, Cagliari in combined epitaxial methods of growth of advanced heterostructures as well as in optics of long-time ordered crystals.
1993 - lecturing for professors and postgraduate students of Italian Universities (Universita di Roma 'Sapienza I', Universita degli Studi, Cagliari).
1993, 1997, 1999, 2001. Invited talks at various international conferences on semiconductors and materials science, lecturing, consulting and contract works on advanced light-emitting and photosensitive heterostructures for the United States Air Force in framework of the USAF Window-on-Science Program for European scientific leaders and Soros Foundation Programs.
1999 - 2001: preparation of textbooks on materials for electronics, technology of semiconductors, microelectronics technology and laser application, lecturing in English for foreign students of Free University of Moldova.
2000-present time: elaboration and supervision of some projects on opto- and microelectronics for international cooperation (see the relevant item), signing of the Agreement on collaboration between Free International University of Moldova and Clemson University, SC, USA (2004), Fulbright Fellowship and joint research at Center for Optical Materials Science and Engineering Technologies, Clemson University (2005-2006).
2001-2002: Senior scientist and expert in international cooperation of The Scientific Research Center, Ministry of Defense of Moldova.
1999-2005: Senior lecturer and full professor at Free International University of Moldova (Courses: Materials for Electronics, Technology of Semiconductors, Solid State Physics, Microelectronics Technology, Application of Lasers).
Lectures and seminars for scientists and post graduate students: Photoconductivity and Luminescence of Semiconductors, Multi-Quantum Absorption, Bound Excitons of High Density, Long-Time Ordering in Semiconductors, Optical Properties of Ternary and Multinary Semiconducors, Combined Epitaxial Methods for Heterostructures with Big Lattice Mismatch, Some Application of Lasers in Medicine.
More than 150 scientific papers in scientific press, 2 monographs and 10 patents in physics and technology of semiconductors, optics and laser application in science, industry and medicine.
Most significant professional accomplishments:
1964-1966: synthesis and single crystal growth for unique collection of semiconducting doped Gallium Phosphide (GaP), elaboration of methods for long-last monitoring of their properties during 30-50 years period - now it is the main element of the proposed activity.
1967 - delivering of the first industrial lasers to Moldova and start of laser based R&D in science, high-tech and medicine.
1967 - present time: monitoring of long-time processes in GaP single crystals, discovering of long-time ordering in its crystal lattice and impurity disposition.
1967-1974: discovering of new phenomena in non-linear optics (multi-quantum processes in semiconductors) and in bound excitons of high density, inventions in laser application for microelectronics and medicine.
1986 - initiated by academician Alexander M. Prokhorow, Nobel Prize Laureate opening in Moldova of the Laser Research Laboratory headed by S. Pyshkin.
1989-1993: joint investigations with Italian colleagues at Rome, Milan, Parma, Cagliari in combined epitaxial methods of growth of advanced heterostructures as well as in optics of long-time ordered crystals.
1993 - lecturing for professors and postgraduate students of Italian Universities (Universita di Roma 'Sapienza I', Universita degli Studi, Cagliari).
1993, 1997, 1999, 2001. Invited talks at various international conferences on semiconductors and materials science, lecturing, consulting and contract works on advanced light-emitting and photosensitive heterostructures for the United States Air Force in framework of the USAF Window-on-Science Program for European scientific leaders and Soros Foundation Programs.
1999 - 2001: preparation of textbooks on materials for electronics, technology of semiconductors, microelectronics technology and laser application, lecturing in English for foreign students of Free University of Moldova.
2000-present time: elaboration and supervision of some projects on opto- and microelectronics for international cooperation (see the relevant item), signing of the Agreement on collaboration between Free International University of Moldova and Clemson University, SC, USA (2004), Fulbright Fellowship and joint research at Center for Optical Materials Science and Engineering Technologies, Clemson University (2005-2006).
Future Research
I. Combine epitaxial method for advanced light-emitting and photo- sensitive layers grown onto si substrates and SI microchips
The method is highly efficient for growth of advanced hetero-structures from materials having a big (more than 1%) mismatch of lattice period, for instance, Si/GaAs, Si/InP, Si/(Ca,Sr,Ba)F2/ InP and other III-V and dielectric crystalline films onto Si or III-V substrates for 3-D optoelectronic integral circuits (OEIC). The problem is solved with the help of developed by the author Laser Vacuum Epitaxy (LVE) method giving an opportunity to grow on initial stage of an epitaxial layer (primer) alternating its composition between a substrate and covered materials. Such a layer smoothly conjugates lattice periods, mechanical and thermal properties of the heterostructure components. GaAs and other III-V films onto Si were grown and investigated by us [1, 2] for many years before recent achievements in this direction at Motorola [3]. The same problem of the lattice mismatch in a double heterostructure, for instance, Si/SrF2/InP(100) is solved by MBE growth onto Si of (Ca, Sr)F2 solid solution with the next growth of InP film by combined MBE and LVE method [4].
1. Budyanu V A, Chechuy S N, Pyshkin S L et al., 1985 phys. stat. sol. (a), Vol. 91, p737;
2. Pyshkin S L, Fedoseev S A, Lagomarsino S, Giannini C, 1992 Appl. Surf. Scie., 56-58, p39;
3. http://PhysicsWeb.org/article/news/5/9/3;
4. Pyshkin S L, et al., 1996 NATO ASI Series, 3.High Technology - Vol.36, p. 468.
II. Advanced light-emitting structures
The author is the sole owner of the unique collection of 40 years aged single crystals of pure and doped Gallium Phosphide. The ordered solid bound exciton phase discovered by the author in aged GaP:N single crystals [1-3] is absolutely new phenomenon supplying a unique opportunity to get various non-linear optical effects at very low exciting light intensity as well as to develop new generation of optoelectronic devices for accumulation, conversion and transport of light energy. Results of regular observations of very exciting changes happening in these crystals with time are used in development of the above noted new combined growth technique compatible with built-in ion lithography for fabrication of these advanced light-emitting and photosensitive devices. Current collaboration with the Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University, SC gives new promising results in technology and properties of the composite light emissive structures on the base of transparent fluoropolymers and incorporated there luminescent semiconductor nano particles [4-7].
1. Pyshkin S L and Zifudin L Zv, Excitons in Highly Optically Excited Gallium Phosphide, 1974 J. Lum., Vol. 9, p302;
2. Pyshkin S L, Anedda A, Congiu F and Mura A, Luminescence of the GaP:N Ordered System, 1993, J. Pure Appl. Opt., Vol. 2, p499;
3. Pyshkin S L, Luminescence of Long-Time Ordered GaP:N (invited speaker), The American Ceramic Society 103rd Annual Meeting & Exposition (April 22-25, 2001, Indianapolis), Abstract Book, p 33, ACerS Transaction series: 'Optoelectronics - Materials and Technology in Information Age', V. 126, ACerS, Westerville, OH, 2002, pp 3-12;
4.John Ballato and Sergei L. Pyshkin, 2nd Int. Conf. on Materials Science and Condensed Matter Physics, Kishinev, Moldova, September 21-26, 2004, Abstract Book, p130.
5. J. Ballato, S.L. Pyshkin, Int. Seminar "Display Optics'04", St.Petersburg, Russia, October 18-20, 2004, Abstract Book, p47.
6. Sergei Pyshkin and John Ballato, invited talk: "Advanced Light Emissive Composite Materials for Integrated Optics", Symposium: The Physics and Materials Challenges for Integrated Optics - A Step in the Future for Photonic Devices, MS&T Conference, Pittsburgh, PA, September 25-28, 2005, pp 3-13.
7. S.L. Pyshkin , J. Ballato, G. Chumanov, J. DiMaio and A.K. Saha,"Preparation and Characterization of Nanocrystalline GaP", Symposium "Nanoelectronics and Photonics", 2006 NSTI Nanotech Conference, Boston, May 7-11, Technical Proceedings of the Conference, Vol. 3, pp 194-197.
III. Multi-quantum spectroscopy of semiconductors
The specific goal of the proposal is elaboration of the method of multi-quantum spectroscopy of semiconductors (MQSS) based on recent theory of multi-quantum transitions and statistical properties of photons as well as on original results in investigation of photo-conductivity and light absorption in some semiconductors at high level of optical excitation. MQSS deals with the light absorption processes in which two or more quanta (photons and phonons) participate simultaneously [1-2]. Multi-quantum spectroscopy is more effective that the traditional single-photon spectroscopy. It concerns primarily the optical transitions into the bands next after the first allowed band as well as the forbidden in the dipole approximation transitions. In the case of multi-quantum transitions the light absorption coefficient is less than one reciprocal centimeter, so it makes possible to investigate namely volumetric but not superficial optical properties of a semiconducting crystal. MQSS gives also an opportunity to get new information on band structure of semiconductors as well as on photon statistics. Recent progress in lasers and crystal growth makes possible to introduce in practice this new spectroscopic method as well as to generalize the idea of multi-quantum spectroscopy of solids.
1. Pyshkin S L et al., Multi-Quantum Absorption in GaP, 1970 Opto-electronics, Vol. 2, p245;
2. Pyshkin S L et al., 1973 Opto-electronics, Vol.5, p405
The author will be very grateful for any promotion in accomplishment of these promising works in framework of an academic or industrial program. He is prepared to share the outcome in the form of joint patents or other intellectual property rights with the institutions which would be involved in these projects.
The method is highly efficient for growth of advanced hetero-structures from materials having a big (more than 1%) mismatch of lattice period, for instance, Si/GaAs, Si/InP, Si/(Ca,Sr,Ba)F2/ InP and other III-V and dielectric crystalline films onto Si or III-V substrates for 3-D optoelectronic integral circuits (OEIC). The problem is solved with the help of developed by the author Laser Vacuum Epitaxy (LVE) method giving an opportunity to grow on initial stage of an epitaxial layer (primer) alternating its composition between a substrate and covered materials. Such a layer smoothly conjugates lattice periods, mechanical and thermal properties of the heterostructure components. GaAs and other III-V films onto Si were grown and investigated by us [1, 2] for many years before recent achievements in this direction at Motorola [3]. The same problem of the lattice mismatch in a double heterostructure, for instance, Si/SrF2/InP(100) is solved by MBE growth onto Si of (Ca, Sr)F2 solid solution with the next growth of InP film by combined MBE and LVE method [4].
1. Budyanu V A, Chechuy S N, Pyshkin S L et al., 1985 phys. stat. sol. (a), Vol. 91, p737;
2. Pyshkin S L, Fedoseev S A, Lagomarsino S, Giannini C, 1992 Appl. Surf. Scie., 56-58, p39;
3. http://PhysicsWeb.org/article/news/5/9/3;
4. Pyshkin S L, et al., 1996 NATO ASI Series, 3.High Technology - Vol.36, p. 468.
II. Advanced light-emitting structures
The author is the sole owner of the unique collection of 40 years aged single crystals of pure and doped Gallium Phosphide. The ordered solid bound exciton phase discovered by the author in aged GaP:N single crystals [1-3] is absolutely new phenomenon supplying a unique opportunity to get various non-linear optical effects at very low exciting light intensity as well as to develop new generation of optoelectronic devices for accumulation, conversion and transport of light energy. Results of regular observations of very exciting changes happening in these crystals with time are used in development of the above noted new combined growth technique compatible with built-in ion lithography for fabrication of these advanced light-emitting and photosensitive devices. Current collaboration with the Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University, SC gives new promising results in technology and properties of the composite light emissive structures on the base of transparent fluoropolymers and incorporated there luminescent semiconductor nano particles [4-7].
1. Pyshkin S L and Zifudin L Zv, Excitons in Highly Optically Excited Gallium Phosphide, 1974 J. Lum., Vol. 9, p302;
2. Pyshkin S L, Anedda A, Congiu F and Mura A, Luminescence of the GaP:N Ordered System, 1993, J. Pure Appl. Opt., Vol. 2, p499;
3. Pyshkin S L, Luminescence of Long-Time Ordered GaP:N (invited speaker), The American Ceramic Society 103rd Annual Meeting & Exposition (April 22-25, 2001, Indianapolis), Abstract Book, p 33, ACerS Transaction series: 'Optoelectronics - Materials and Technology in Information Age', V. 126, ACerS, Westerville, OH, 2002, pp 3-12;
4.John Ballato and Sergei L. Pyshkin, 2nd Int. Conf. on Materials Science and Condensed Matter Physics, Kishinev, Moldova, September 21-26, 2004, Abstract Book, p130.
5. J. Ballato, S.L. Pyshkin, Int. Seminar "Display Optics'04", St.Petersburg, Russia, October 18-20, 2004, Abstract Book, p47.
6. Sergei Pyshkin and John Ballato, invited talk: "Advanced Light Emissive Composite Materials for Integrated Optics", Symposium: The Physics and Materials Challenges for Integrated Optics - A Step in the Future for Photonic Devices, MS&T Conference, Pittsburgh, PA, September 25-28, 2005, pp 3-13.
7. S.L. Pyshkin , J. Ballato, G. Chumanov, J. DiMaio and A.K. Saha,"Preparation and Characterization of Nanocrystalline GaP", Symposium "Nanoelectronics and Photonics", 2006 NSTI Nanotech Conference, Boston, May 7-11, Technical Proceedings of the Conference, Vol. 3, pp 194-197.
III. Multi-quantum spectroscopy of semiconductors
The specific goal of the proposal is elaboration of the method of multi-quantum spectroscopy of semiconductors (MQSS) based on recent theory of multi-quantum transitions and statistical properties of photons as well as on original results in investigation of photo-conductivity and light absorption in some semiconductors at high level of optical excitation. MQSS deals with the light absorption processes in which two or more quanta (photons and phonons) participate simultaneously [1-2]. Multi-quantum spectroscopy is more effective that the traditional single-photon spectroscopy. It concerns primarily the optical transitions into the bands next after the first allowed band as well as the forbidden in the dipole approximation transitions. In the case of multi-quantum transitions the light absorption coefficient is less than one reciprocal centimeter, so it makes possible to investigate namely volumetric but not superficial optical properties of a semiconducting crystal. MQSS gives also an opportunity to get new information on band structure of semiconductors as well as on photon statistics. Recent progress in lasers and crystal growth makes possible to introduce in practice this new spectroscopic method as well as to generalize the idea of multi-quantum spectroscopy of solids.
1. Pyshkin S L et al., Multi-Quantum Absorption in GaP, 1970 Opto-electronics, Vol. 2, p245;
2. Pyshkin S L et al., 1973 Opto-electronics, Vol.5, p405
The author will be very grateful for any promotion in accomplishment of these promising works in framework of an academic or industrial program. He is prepared to share the outcome in the form of joint patents or other intellectual property rights with the institutions which would be involved in these projects.
Industrial Relevance
Combined epitaxial methods including Laser Vacuum Epitaxy (LVE) on the first stage give a unique opportunity to fabricate any advanced hetero- or multi-layer structures with optimal combinations of physical parameters and low degradation of properties. A very instructive example is the films of III-V semiconductors grown onto Si substrate or chips. Without application of these methods the big lattice mismatch between materials is practically insuperable obstacle for fabrication of these structures as well as for development of 3-dimensional opto- and microelectronics in general.
Long-term ordering (LTO) besides the fundamental scientific interest gives a unique opportunity to considerably improve perfection of artificially grown crystals and to discover new useful properties applicable for semiconductor device manufacturing. In particular, the ordered high density bound exciton system with approximately Bohr radius distance between the excitons represents a crystalline excitonic phase that has unique and highly useful properties. It also potentially contains giant light capacity and low threshold non-linear effects. For application in new generation of mesoscopic light emitters, transducers and receivers GaP films periodically doped by N atoms can be artificially grown by molecular beam and/or laser assisted epitaxy. It was also shown by us that long-term ordering in crystal growth industry can be replaced by a more convenient short-time temperature treatment of fresh crystals.
Results of investigation of the phenomena obtained with the unique collection of ordered GaP single crystals give useful recommendations and a new approach to fabrication of the future generation of opto- and microelectronic devices. In general, all the wares fabricated from the aged crystals will be considerably more tolerant to degradation than the ones fabricated from fresh analogues. New composite materials on the base of fluoropolymers with incorporated there fluorescent nano particles have a very promising application in different spheres.
Multi-quantum spectroscopy of semiconductors (MQSS) besides application in spectroscopy of bulk semiconductor materials can be a veryefficient in situ express-method for determination and control of electronic band structure of nano- crystals and low dimensional device structures during their fabrication. Broad application of this method highly depends on progress in elaboration of powerful short-pulse lasers with tunable wavelength and degree of coherence.
Long-term ordering (LTO) besides the fundamental scientific interest gives a unique opportunity to considerably improve perfection of artificially grown crystals and to discover new useful properties applicable for semiconductor device manufacturing. In particular, the ordered high density bound exciton system with approximately Bohr radius distance between the excitons represents a crystalline excitonic phase that has unique and highly useful properties. It also potentially contains giant light capacity and low threshold non-linear effects. For application in new generation of mesoscopic light emitters, transducers and receivers GaP films periodically doped by N atoms can be artificially grown by molecular beam and/or laser assisted epitaxy. It was also shown by us that long-term ordering in crystal growth industry can be replaced by a more convenient short-time temperature treatment of fresh crystals.
Results of investigation of the phenomena obtained with the unique collection of ordered GaP single crystals give useful recommendations and a new approach to fabrication of the future generation of opto- and microelectronic devices. In general, all the wares fabricated from the aged crystals will be considerably more tolerant to degradation than the ones fabricated from fresh analogues. New composite materials on the base of fluoropolymers with incorporated there fluorescent nano particles have a very promising application in different spheres.
Multi-quantum spectroscopy of semiconductors (MQSS) besides application in spectroscopy of bulk semiconductor materials can be a veryefficient in situ express-method for determination and control of electronic band structure of nano- crystals and low dimensional device structures during their fabrication. Broad application of this method highly depends on progress in elaboration of powerful short-pulse lasers with tunable wavelength and degree of coherence.
Keywords
COS Keywords:
Dielectric Materials, Engineering, Informatics, Lasers and Masers, Microelectronics, Nanotechnology, Nonlinear Optics, Optical Materials, Optics, Physics, Scattering, Scientific Instrumentation, Semiconductors, Thin Films.Additional Terms:
Laser Application, Nanotechnology, Physics and Technology of Semiconductors.Languages
(Reading, Writing, Speaking)
English: (Fluent, Fluent, Fluent)
Russian: (Fluent, Fluent, Fluent)
German: (Fluent, Fluent, Functional)
Italian: (Fluent, Functional, Basic)
Romanian: (Basic, Basic, Basic)
Memberships
American Ceramic Society
Open Information Society of Moldova
Scientific Council at the Institute of Applied Physics
Honors and Awards
2005-2005,
Fulbright Fellow,
The US Department of State,
Clemson University,
Research
1991, Full Professor,
U.S.S.R. Academy of Sciences,
Physics of semiconductors, optics
1987, State Prize of Moldova,
Government of Moldova,
Academy of Sciences,
Contribution into physics of semiconductors and microelectronics
Previous Positions
1986-2001, Head,
Academy of Sciences of Moldova,
Institute of Applied Physics,
Laser Research Laboratory
Patents
A Method of Cd-In-S Single Crystal Preparation,
Patent Number: 1723851 A1,
1990,
Pyshkin S L, et al,
USSR.
A Device for Modulation of Light,
Patent Number: 4788328/24-10-015912,
1990,
Pyshkin S L, et al,
USSR.
A Metod of Preparation of Semiconductor Structures at Integral Circuits Fabrication,
Patent Number: 4429188,
1988,
Pyshkin S L, et al,
USSR.
A Method of Preparation of Semiconductor Structures,
Patent Number: 4285717/24-25,
1987,
Pyshkin S L, et al,
USSR.
A Metod of Sinuit Treatment,
Patent Number: 3948714,
1985,
Pyshkin S L, et al,
USSR.
A Device for Irradiation in Otorhinolaryngology,
Patent Number: 1341790,
1985,
Pyshkin S L, et al,
USSR.
A Multi-Channel Sampling and Memory Device,
Patent Number: 1098034,
1984,
Pyshkin S L, et al,
USSR.
A Multi-Channel Sampling and Memory Device,
Patent Number: 1117708,
1984,
Pyshkin S L, et al,
USSR.
A Method of Preparation of Ga-Te-P Solid Solutions,
Patent Number: 43846,
1964,
Pyshkin S L, et al,
USSR.
Funding Received
- Italian Council for Research (CNR); Ministry of Science, Technology & Universities: Technology, lecturing and investigations at Italian institutions, Total app. $20,000, Sep 1989 to Oct 1993.
- The U.S. Civilian Resarch & Development Foundation (CRDF): Travel Grant to South Carolina, Clemson University, scientific collaboration, appr. $4,000, Oct 25, 2003 to Oct 8, 2003.
- Soros Foundation: Supporting (1991) and Travel grants (1993, 2001), Total app. $4,000, Nov 1991 to Apr 2001.
- Air Force Office of Scientific Research (AFOSR): Window-on-Science Program, App. $3,000, Nov 1, 1999 to Nov 12, 1999.
- Air Force Office of Scientific Research (AFOSR): Window-on-Science Program, App. $3,000, May 10, 1997 to May 24, 1997.
- Soros Foundation and Air Force Office of Scentific Research (AFOSR): Travel grant to Indianapolis, invited talk at the 103rd ACerS Annual Meeting, appr. $2,000, Apr 4, 2001 to .
- The US Civilian Resarch & Development Foundation (CRDF): Travel Grant to Anaheim, CA, Conference on Nanotechnology, appr. $4,000, 2005 to 2005.
- The US Department of State: Fulbright Fellowship, appr, $12,000, 2005 to 2005.
- Air Force Office of Scientific Research (AFOSR): SPQ-97-4011, $24,900, 1997 to 1998.
- Air Force Office of Scientific Research (AFOSR): SPQ-94-4098, $10,000, 1994 to 1995.
- U.S.S.R. Ministry of Defence Industry, Ministry of General Machining and Academy of Sciences: Development and pilot production of single-, two- and multi-channel analysers of fast processes (boxcar-integrators) and IR matrix photoreceivers, App. $ 500,000, 1982 to 1989.
- U.S.S.R. Government State Committee on Science and Technology and Academy of Sciences: Development of non-linear optical, laser technological and medical researches in Moldova including opening and equipment of the Laser Research Laboratory and Elelectronics Device Department at Design Office for Solid-State Electronics, App.$200,000, 1972 to 1989.
Publications
- S.L. Pyshkin , J. Ballato, G. Chumanov, J. DiMaio and A.K. Saha (2006) Preparation and Characterization of Nanocrystalline GaP, 2006 NSTI Conference of Nanotechnology, USA, NSTI, Vol.3, 194-197 pages
- Sergei Pyshkin, John Ballato (2005) Advanced Light Emissive Composite Materials for Integrated Optics, Symposium: The Physics and Materials Challenges for Integrated Optics - A Step in the Future for Photonic Devices, MS&T Conference, Pittsburgh, American Society for Materials Science and Technology, 3-13 pages
- Sergei L. Pyshkin (26 Sep 2002) Epitaxial Methods for Advanced Light-Emitting and Photosensitive Devices, Proc. of the 3rd International Conference on Microelectronics and Computer Science, 320-323 pages
- Sergei L. Pyshkin (2002) Bound Excitons in Long-Time Ordered GaP:N, Moldavian Journal of the Physical Sciences, 1 (3), 14-19
- Pyshkin S L, Luminescence of Long-Time Ordered GaP:N (invited), The American Ceramic Society 103rd Annual Meeting & Exposition (April 22-25, 2001, Indianapolis, Indiana, U.S.A.), Abstract Book, p33, ACerS Transaction series: 'Optoelectronics - Materials and Technology in Information Age', Ceramic Transactions., 126, 3-12, 2001
- Pyshkin S L, Pyshkin K S (Jan 2000) Preparation and Characterization of Display Phosphors on Si Substrates and Si Chips, Proc. 5th Int. Conf on Science and Technology of EL Displays, (5-9 November, 1999, San Diego, CA), J. of SID, 217 pages
- Pyshkin S L, Anedda A (1998) Impurity-Bound Excitons in Ordered GaP:N System, Int. Conf. on Shallow Centers in Semiconductors, Montpellier, France, July 27-30, 1998, Abstract, 104 pages
- Pyshkin S L, Anedda A (1998) Time-Dependent Behaviour of Antistructural Defects and Impurities in Cd-In-S and GaP, Proc. XI ICTMC, Salford 1997, Ternary and Multinary Compounds, 785 pages
- Pyshkin S L, Grekov V P, Lorenzo J P, Novikov S V, Pyshkin K S, Reduced Temperature Growth and Characterization of InP/SrF2/InP(100) Heterostructure, Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics, NATO ASI Series, 3.High Technology, 36, 468, 1996
- Pyshkin S L, Anedda A, Congiu F and Mura A (1993) Luminescence of the GaP:N Ordered System, Journal of Pure Appl. Opt, 2, 499
- Pyshkin S L, Anedda A (1993) Preparation and Properties of GaP Doped by Rare-Earth Elements, Proc. of The 1993 MRS Spring Meeting, (San Francisco, April 1993, Symp. E), 192 pages
- Pyshkin S L, Fedoseev S A, Lagomarsino S, Giannini C, Preparation and Structural Properties of Some III-V Semiconductor Films Grown on (100) Oriented Si Substrates, Applied Surface Science, 56-58, 39, 1992
- Pyshkin S L, Radautsan S I, Et Al, Processes of Long-Lasting Ordering in Crystals with a Partly Inverse Spinel Structure, Sov. Phys. Dokl, 35(4), 301, 1990
- Pyshkin S L, Tiginyanu I M, Et Al, Raman Spectra of Cd-In-S with Different Cation-Sublattice Ordering, Sov. Phys. Dokl, 35(12), 1064, 1990
- Pyshkin S L, State and Prospects for Technology of Film Microelectronic Devices, Laser Methods of Preparation of Semiconductor Structures and Their Investigation, Kishinev, Publ. House Shtiintsa, (in Russian), 3, 1988
- Pyshkin S L, Et Al, Epitaxial Growth Processes by Vapour-Plasma Flux Created by Laser Irradiation, IIIrd Int. Symp. Optika-88, Lectures, Budapest, 473, 1988
- Budyanu V A, Chechuy S N, Pyshkin S L, Et Al, Laser Vacuum Epitaxy of III-V Semiconductors on Silicon, Rev. Roumaine de Physique, 32(1-2), 216, 1987
- Budyanu V A, Chechuy S N, Damaskin I A, Fedoseev S A, Pyshkin S L, Zenchenko V P, Spectroscopic Investigation of Semiconductor Target Evaporation by Laser Radiation, Rev. Roumaine de Physique, 31(9-10), 1047, 1986
- Budyanu V A, Chechuy S N, Pyshkin S L, Et Al, Investigation of III-V/Si Heterojunction Grown by Laser Deposition, phys. stat. sol. (a), 91, 737, 1985
- Korobkin V V, Prokhorow A M, Pyshkin S L, Et Al, Analyzers of Fast Processes, Bull. Mold. Ac. Scie, 3, 2319, 1984
- Pyshkin S L, Et Al, Properties of n-GaAs/p-Si Heterojunctions Prepared by Laser Vacuum Epitaxy, Fizika i Tehnika Poluprovodnikov (in Russian), 18(4), 619, 1984
- Pyshkin S L, Et Al, Prospects for Laser Vacuum Epitaxy in Creation of Opto-Electronics Components, Institute of Applied Physics, Ac.Scie., Kishinev, Publ. House Shtiintsa (in Russian), 1982
- Pyshkin S L, Lasers and Their Application, Cartea Moldoveniasca Publ. House, 1982
- Pyshkin S L, Fedoseev S A, Chechuy S N, Laser Vacuum Deposition and Investigation of Thin Films and Thin Film Device Structures, Ist Int. Symp. Optika-80, Lectures, Budapest, 488, 1980
- Pyshkin S L, Stimulated Emission of Radiation in GaP, Sov. Phys. Dokl, 219(6), 1345, 1974
- Pyshkin S L, Luminescence of GaP:N:Sm Single Crystals, Soviet Physics - Semiconductors, 8, 1397, 1974
- Pyshkin S L, Zifudin L Zv (1974) Excitons in Highly Optically Excited Gallium Phosphide, Journal of Luminescence, 9, 302
- Damaskin I A, Pyshkin S L, Radautsan S I, Tazlavan V, Multi-Quantum Photoconductivity in Cd-In-S, Opto-electronics, 5, 405, 1973
- Damaskin I A, Pyshkin S L, Radautsan S I, Tazlavan V E, Shift of Luminescence in Some Semiconductors, Sov. Phys. JETP Letters, 18(4), 239, 1973
- Pyshkin S L, Et Al., Multi-Quantum Absorption in GaP, Opto-electronics, 2, 245, 1970
- Vladimirov V I, Pyshkin S L, Ferdman N A, Generation of a Longitudinal Electric Field in CdS by Intense Laser Irradiation, phys. stat. sol, 39, 207, 1970
- Pyshkin S L, Radautsan S I, Negreskul V V, Gallium Phosphide, Shtiintsa Publ. House, 1970
- Ashkinadze B M, Kretsu I P, Pyshkin S L, Yaroshetskii I D, Luminescence of Gallium Phosphide Near an Indirect Transition in the Multiphoton Excitation Case, Soviet Physics - Semiconductors, 2(10), 1261, 1969
- Goryunova N A, Pyshkin S L, Borschevsky A S, Et Al., Influence of Impurities and Crystallisation Conditions on Growth of Platelet GaP Crystals, Rost crystallov, 8(2), 84, 1968
- Ashkinadze B M, Kretsu I P, Pyshkin S L, Et Al, Effect of Electric Field on Exciton Radiation Intensity in GaP, Soviet Physics - Solid State, 10(12), 2921, 1968
- Ashkinadze B M, Bobrysheva A I, Pyshkin S L (1968) Some Non-linear Optical Effects in GaP, Proc. IX Int. Conf. on the Physics of Semiconductor, Moscow, July 23-29, 189 pages
- Ashkinadze B M, Pyshkin S L, Ryvkin S M, Yaroshetskii I D, Photoconductivity of Gallium Phosphide Under Excitation by Giant Pulses of Ruby Laser, Soviet Physics - Semiconductors, 1(7), 1017, 1967
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